发明名称 |
Stepped photoresist profile and opening formed using the profile |
摘要 |
Stepped photoresist profiles provide various methods of forming profiles in an underlying substrate. The stepped photoresist profiles are formed in two layers of photoresist that are disposed over the substrate. The substrate is then etched twice using a respective opening in each photoresist layer to create a stepped profile in the substrate.
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申请公布号 |
US2002111030(A1) |
申请公布日期 |
2002.08.15 |
申请号 |
US20010996253 |
申请日期 |
2001.11.28 |
申请人 |
BATRA SHUBNEESH;PIERRAT CHRISTOPHE |
发明人 |
BATRA SHUBNEESH;PIERRAT CHRISTOPHE |
分类号 |
H01L21/027;H01L21/308;H01L21/768;H01L29/812;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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