| 摘要 |
First, electron beam exposure data identifiable for each type of pattern of a semiconductor device is inputted (S 601 ). Then, electron beam exposure data on a first type of pattern is not corrected, while electron beam exposure data on a second type of pattern is corrected (S 603 ). The first type of pattern is, for example, a dummy pattern having no influence on the function of the semiconductor device. The second type of pattern is for example, a normal pattern having an influence on the function of the semiconductor device.
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