| 摘要 |
Disclosed herein is a self refresh control device for reducing a current leakage of transistors in off-state. The apparatus for controlling a voltage used in a semiconductor memory device includes a first voltage supplying block for supplying a first voltage to the semiconductor memory device in response to an inputted control signal; and a second voltage supplying block for supplying a second voltage to the semiconductor memory device in response to the inputted control signal, wherein the first and the second voltages are used as a bulk voltage of a transistor included in the semiconductor memory device.
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