发明名称 SEMICONDUCTOR RADIATION DETECTOR AND POSITRON EMISSION TOMOGRAPHY DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To improve sensitivity of radiation detection by having a semiconductor element appropriately held, in a semiconductor radiation detector having a laminated structure of a semiconductor element and an electrode plate. <P>SOLUTION: The semiconductor radiation detector 1 has a laminated structure composed of semiconductor elements 11 converting received radiation into electric signals and metal electrode plates 12C and 12A which are alternately bonded with an electroconductive adhesive 14, wherein at least one of the electrode plates 12C and 12A composing the laminated structure is formed with a cutout part 13 in an area contacting with the semiconductor element 11. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008089354(A) 申请公布日期 2008.04.17
申请号 JP20060268686 申请日期 2006.09.29
申请人 HITACHI LTD 发明人 KIYONO TOMOYUKI;ISHIZU TAKAAKI;TAKAHASHI ISAO
分类号 G01T1/24;G01T1/161;H01L31/09 主分类号 G01T1/24
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