| 摘要 |
A method for fabricating a MOS transistor with a recess channel, including: providing a substrate with a plurality of trench capacitors therein, wherein a trench top oxide is positioned on top of each trench capacitor and extended away from the substrate surface; forming a first spacer on side walls of the trench top oxide; forming a second spacer on the first spacer; defining a plurality of active areas, wherein each of the active areas is parallel with each other and comprises at least two of the trench capacitors; forming an isolation area between each of the active area; etching the substrate of the active area by using the second spacer as a mask to form a trench in the active area; removing the second spacer to expose a portion of the substrate, and etching the exposed substrate to enlarge the trench; and forming a gate structure in the trench.
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