| 摘要 |
According to the present invention, disclosed are a method for programming a one-time password (OTP) cell array, capable of setting a portion of programmed fuse blocks as a protection area, and a semiconductor memory device including the same. An OTP memory comprises a plurality of fuse cells in which more than two fuse cells are programmed at once. When current flowing through each fuse cell in a program mode is increased and attains a constant value, the current flowing through each fuse cell is blocked. Accordingly, the OTP memory and the semiconductor memory device including the same achieve short total programming time and occupy a smaller chip area. |
