| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon carbide semiconductor device, capable of suppressing increase of a contact resistance.SOLUTION: A silicon carbide substrate 10 having a first principal surface 10a and a second principal surface 10b is prepared. The silicon carbide substrate 10 includes: a first impurity region 12 having a first conductivity type; a second impurity region 13 that is arranged on the first impurity region 12 and has a second conductivity type; and a third impurity region 14 that is arranged on the second impurity region 13 so as to be separated from the first impurity region 12, comprises the first principal surface 10a, and has the first conductive type. In the first principal surface 10a, a protective layer 2 covering the third impurity region 14 is formed. In a state where the protective layer 2 covers the third impurity region 14, an oxide film 3 contacting to the second impurity region 13 is formed by thermal-oxidating the silicon carbide substrate 10. An electrode 16 connecting to the third impurity region 14 is formed. The protective layer 2 and the oxidation film 3 structure a gate insulation film 15.SELECTED DRAWING: Figure 1 |
