| 发明名称 |
DUAL-ZONE HEATER FOR PLASMA PROCESSING |
| 摘要 |
A method and apparatus for a pedestal is provided. In one embodiment, the pedestal includes a body comprising a ceramic material having a flange, one or more heating elements embedded in the body, a first shaft coupled to the flange, and a second shaft coupled to the first shaft; wherein the second shaft includes a plurality of fluid channels formed therein that terminate in the second shaft. |
| 申请公布号 |
US2016230281(A1) |
申请公布日期 |
2016.08.11 |
| 申请号 |
US201615009345 |
申请日期 |
2016.01.28 |
| 申请人 |
Applied Materials, Inc. |
发明人 |
LIN Xing;ZHOU Jianhua;ROCHA-ALVAREZ Juan Carlos;SANKARAKRISHNAN Ramprakash |
| 分类号 |
C23C16/46;H01L21/687;H01L21/67;C23C16/458;H01J37/32 |
主分类号 |
C23C16/46 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A pedestal for a semiconductor processing chamber, comprising:
a body comprising a ceramic material having a flange; one or more heating elements embedded in the body; a first shaft coupled to the flange; and a second shaft coupled to the first shaft; wherein the second shaft includes a plurality of fluid channels formed therein that terminate in the second shaft. |
| 地址 |
Santa Clara CA US |
