发明名称 Hydrogen Storage Alloys
摘要 Hydrogen storage alloys comprising a) at least one main phase, b) a storage secondary phase and c) a catalytic secondary phase, where the weight ratio of the catalytic secondary phase abundance to the storage secondary phase abundance is ≧3; or comprising a) at least one main phase, b) from 0 to about 13.3 wt % of a storage secondary phase and c) a catalytic secondary phase, where the alloy comprises from 0.05 at % to 0.98 at % of one or more rare earth elements; or comprising a) at least one main phase, b) from 0 to about 13.3 wt % of a storage secondary phase and c) a catalytic secondary phase, where the alloy comprises for example i) one or more elements selected from the group consisting of Ti, Zr, Nb and Hf and ii) one or more elements selected from the group consisting of V, Cr, Mn, Ni, Sn, Al, Co, Cu, Mo, W, Fe, Si, Sn and rare earth elements, where the atomic ratio of ii) to i) is from about 1.80 to about 1.98, exhibit improved electrochemical properties, for instance improved low temperature electrochemical performance.
申请公布号 US2016230257(A1) 申请公布日期 2016.08.11
申请号 US201514619352 申请日期 2015.02.11
申请人 BASF Corporation 发明人 Young Kwo;Wong Diana;Nei Jean
分类号 C22C30/04;H01M12/08;H01M10/34;H01M4/38;H01M8/08 主分类号 C22C30/04
代理机构 代理人
主权项 1. A hydrogen storage alloy, comprising a) at least one main phase, b) a storage secondary phase and c) a catalytic secondary phase, where the weight ratio of the catalytic secondary phase abundance to the storage secondary phase abundance is ≧3 and where the main phase or phases in total are present at a higher abundance by weight than each of the secondary phases, which alloy exhibits an improvement of surface catalytic ability at −40° C., defined as the product of charge transfer resistance (R) and double layer capacitance (C), of at least 10%, relative to the AB2 alloy Ti12.0Zr21.5V10.0Cr7.5Mn8.1Ni32.2Sn0.3Al0.4Co8.0; and/or which exhibits a charge transfer resistance at −40° C. of ≦60 Ω·g; and/or which exhibits a surface catalytic ability at −40° C., defined as the product of charge transfer resistance (R) and double layer capacitance (C), of ≦30 seconds.
地址 Florham Park NJ US