| 摘要 |
PROBLEM TO BE SOLVED: To suppress contamination to a substrate caused by foreign matter generated in a film deposition chamber.SOLUTION: A film deposition apparatus comprises a treatment container, a partition plate, a mounting table that is installed in a film deposition chamber, a first gas supply part that supplies a film forming gas to the film deposition chamber, a second gas supply part that supplies a rare gas to a plasma generation chamber, a first plasma source that generates plasma of the film forming gas and plasma of the rare gas in the plasma generation chamber, a second plasma source that generates plasma of the film forming gas in the plasma generation chamber, and a control part that performs precoat treatment to the plasma generation chamber and the film deposition chamber by generating the plasma of the film forming gas in the first and second plasma sources in a state where other substrates other than a substrate to be deposited are mounted on the mounting table, and performs film deposition treatment to the substrate using neutral particles by generating the plasma of the rare gas in the first plasma source in a state where the substrate is mounted on the mounting table in the film deposition chamber where the precoat treatment has been performed.SELECTED DRAWING: Figure 1 |
