| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching device and an etching method which allow for etching at a very slow etching rate, without using a plasma generator.SOLUTION: An etching device 100 has a reaction chamber 150 for performing gas etching of a Si member, a first gas storage section 111 for storing a first gas containing NOgas, a second gas storage section 121 for storing a second gas containing Fgas, a first pipeline 112 for supplying the first gas from the first gas storage section 111 to the reaction chamber 150, and a first pipeline heating section 192 for heating the first pipeline 112. The first pipeline heating section 192 heats the first pipeline 112 to a temperature in a range of 40°C-200°C.SELECTED DRAWING: Figure 1 |
