发明名称 |
Method for forming pattern, and polysiloxane composition |
摘要 |
A pattern-forming method in which processibility of a silicon-containing film in etching with a fluorine gas and resistance against etching with an oxygen gas can be together improved in a multilayer resist process to form a finer pattern. Provided is a pattern-forming method that includes the steps of (1) providing a silicon-containing film on the upper face side of a substrate to be processed using a polysiloxane composition; (2) forming a resist pattern on the silicon-containing film; (3) dry-etching the silicon-containing film using the resist pattern as a mask to form a silicon-containing pattern; and (4) dry-etching the substrate to be processed using the silicon-containing pattern as a mask to form a pattern, in which the polysiloxane composition includes (A) a polysiloxane containing a fluorine atom, and (B) a crosslinking accelerator. |
申请公布号 |
US9434609(B2) |
申请公布日期 |
2016.09.06 |
申请号 |
US201213629908 |
申请日期 |
2012.09.28 |
申请人 |
JSR Corporation |
发明人 |
Dei Satoshi;Mori Takashi;Takanashi Kazunori |
分类号 |
B81C1/00;C08G77/388;G03F7/075;G03F7/004;G03F7/09;G03F7/11;H05K3/06;C08G77/14;C08G77/24;C09D183/08 |
主分类号 |
B81C1/00 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A pattern-forming method comprising:
(1) providing a silicon-containing film on an upper face side of a substrate to be processed using a polysiloxane composition; (2) forming a resist pattern on the silicon-containing film; (3) dry-etching the silicon-containing film using the resist pattern as a mask to form a silicon-containing pattern; and (4) dry-etching the substrate to be processed using the silicon-containing pattern as a mask to form a pattern, wherein the polysiloxane composition comprises: (A) a polysiloxane comprising a fluorine atom; (B) a crosslinking accelerator; and (C) water, wherein the polysiloxane (A) comprises a fluorinated hydrocarbon group which may be substituted, and the fluorinated hydrocarbon group which may be substituted is a fluorinated alkyl group, a fluorinated alicyclic hydrocarbon group, a pentafluorophenyl group, a fluorinated aryl group other than a fluorinated phenyl group, or a fluorinated aralkyl group, and wherein the crosslinking accelerator (B) is a nitrogen-containing compound which generates a compound having a basic amino group by heating. |
地址 |
Tokyo JP |