METHOD FOR MANUFACTURING PHOTO MASK HAVING PHASE SHIFT LAYER

摘要

PURPOSE: A method for manufacturing a photo mask having a phase shift layer is provided to be capable of preventing the damage of a predetermined surface and simplifying the manufacturing process. CONSTITUTION: A phase shift layer(33) and a light shielding pattern(40) are sequentially formed on a transparent substrate(31). A resist thin film is formed on the resultant structure. At this time, a phase shift process is capable of being applied to the resist thin film. The resist thin film is transformed into a resist pattern(45) by sequentially carrying out the first exposure, a bake process, the second exposure, and a development on the resultant structure. A phase shift pattern is formed by selectively etching the phase shift layer using the resist pattern as an etching mask.