发明名称 |
Electrophotographic selenium layer prodn. on conductive substrate - by vacuum evaporation above glass transition temp. and tempering |
摘要 |
<p>Prodn. of an electrophotographic layer on a (coated) electrically conductive substrate involves vacuum evapn. of Se at a substrate temp. above the Tg of Se, followed by tempering. Pure Se is evaporated at a substrate temp. of 30-55 degrees C and a condensn. rate of 0.5-2.0 mu m/min. and tempered 30 min. to 2 hr. at 60-75 degrees C in an oven, pref. a continuous-heating oven or an air-circulating oven. In an example, Se was evaporated onto an (Al) drum at 40 degrees C and 10-5 torr at a rate of 1 mu m/min, the tempered for 90 min. at 65 degrees C. A good quality film with strong adhesion, entirely free from crystallisation, and improved dark decya and residual potential was obtd. It gave copies with excellent contrast.</p> |
申请公布号 |
DE2707344(A1) |
申请公布日期 |
1978.08.31 |
申请号 |
DE19772707344 |
申请日期 |
1977.02.19 |
申请人 |
LICENTIA PATENT-VERWALTUNGS-GMBH |
发明人 |
DEISSNER,ERICH,DIPL.-PHYS.;DUELKEN,HARTMUT,DIPL.-PHYS.DR.;HEINZ,DIPL.-PHYS.DR. KASSEL,KARL;WALSDORFER,HUBERT,DIPL.-PHYS.DR. |
分类号 |
G03G5/082;(IPC1-7):G03G5/082 |
主分类号 |
G03G5/082 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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