| 摘要 |
PURPOSE:To enlarge photosensitive wavelength region by laminating the first amorphous material layer region contg. GexSi1-x and the second photoconductive layer region contg. Si on a substrate, and rendering the Ge distribution of the first region nonuniform in the layer thickness direction. CONSTITUTION:The first amorphous material layer region 103 contg. GexSi1-x, where 0.95<x<=1, and having a Ge distribution rich on the side of the substrate 101, poor on the reverse side, uniform in a plane parallel to the surface of the substrate 101 is formed on the substrate 101. Then, amorphous material the second layer region 104 is laminated containing Si and atoms, such as B of group III or P of group V of the periodic table, as a substance governing photoconductivity to form a photoconductive layer, thus obtaining a photoconductive material 100. At least one of the regions 103, 104 contains H or halogen atoms, thus obtaining a photoconductive material having high sensitivity to throughout the regions of visible and IR wavelengths, and superior all-environmental type durability, etc. |
