| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and device for plasma treatment by which the amount of contamination transferred from a pedestal to a wafer can be reduced by reducing backside contamination. SOLUTION: A substrate holding device which holds a substrate 1 to be treated on a sample stage and supplies a back face gas 7 between the substrate 1 and sample stage while the substrate 1 is treated incorporates an annular leakage preventing surface 3 having a smooth surface at the position corresponding to the circumferential section of the substrate 1, a plurality of contact holding sections 20 which are positioned between the positions corresponding to the central part and circumferential section of the substrate 1 and hold the substrate 1 on the sample stage, and an electrostatic attracting means which fixes the substrate 1 by bringing the back face of the substrate 1 into contact with the surface 3 and sections 20. |
