| 摘要 |
<p>Disclosed is a semiconductor material avalanche photodiode of a separate multiplication and absorption region heterostructure design (SAM-APD). The improved SAM-APD of this invention has a plurality of floating guard rings (54), (56) and (58) which are separate about a central region (50) and doped in the opposite high concentration from that of the multiplication region (46a) in which they are positioned. These rings float in the sense that they have no contact with the metalized p-contact (52) of the photodiode and no direct contact with the current source. This structure results in an enhanced avalanche effect in the central region with limited undesirable edge breakdown.</p> |
