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发明名称
METHOD OF FABRICATING HEMT DEVICE WITH SELECTIVE ETCHING OF GALLIUM ARSENIDE ANTIMONIDE
摘要
申请公布号
US5118637(A)
申请公布日期
1992.06.02
申请号
US19910643375
申请日期
1991.01.22
申请人
FUJITSU LIMITED
发明人
ISHIKAWA, TOMONORI
分类号
H01L29/812;H01L21/306;H01L21/335;H01L21/338;H01L21/8252;H01L29/205;H01L29/778
主分类号
H01L29/812
代理机构
代理人
主权项
地址
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