| 摘要 |
PURPOSE:To prevent a wiring from sliding by providing a wiring of a lower layer adjacent to an outside of a wiring arranged nearest an outer periphery of a semiconductor chip of wirings of an uppermost layer. CONSTITUTION:A polysilicon film 103 is provided to a field oxide film 102 formed selectively on a surface of a P-type silicon substrate 101, and a layer insulation film 104 is provided covering the polysilicon film 103. The layer insulation film 104 is flattened by reflow treatment. An aluminum film 105-1 is formed inside stepped parts A, B of the layer insulation film 104 by the polysilicon film 103, a cover film 106 consisting of silicon nitride covers it and sealing resin 107 seals it. Contraction stress is thereby dispersed and applied to stepped parts A, B as shown by an arrow. Thereby, it is possible to surely prevent a wiring from sliding. |
