| 摘要 |
PCT No. PCT/DE94/00347 Sec. 371 Date Jan. 5, 1996 Sec. 102(e) Date Jan. 5, 1996 PCT Filed Mar. 28, 1994 PCT Pub. No. WO95/02172 PCT Pub. Date Jan. 19, 1995A temperature sensor has a doped first semiconductor region having a band gap greater than 2 eV and an oppositely doped second semiconductor region also having a band gap greater than 2 eV. The second semiconductor region is adjacent to the first semiconductor region, forming a p-n junction. A source and a drain electrode are connected to each other through the first semiconductor region. The electrical characteristics of the sensor are affected by temperature. Temperature is measured by applying a specified voltage across the electrodes and measuring the resulting current, or by applying a specified current and measuring the resulting voltage. |
