摘要 |
<p>PROBLEM TO BE SOLVED: To change the temperature of a wafer in short time without affecting throughput by providing a dielectric made of an insulating material, an electrode made of a conductor below the dielectric and a heater for heating the dielectric below the electrode. SOLUTION: The electrostatic chuck 3 is constituted of the dielectric 4 made of the insulating material, the electrode 5 made of the conductor provided on the lower face of the dielectric and the heater 6 provided below the electrode 5. An insulating body 7 which is almost columnar is provided between the electrode 5 and the heater 6. The dielectric 4 is made of the insulating material of high heat conductivity and the material of the electrode 5 is not especially restricted if it is made of the conductor of metal or alloy. The heater 6 is formed by alloy constituted of Fe, Cr and Al, for example. Thus, heat by means of heating by heater 6 is speedily transmitted to the dielectric through the electrode 5, and switching from a low temperature to a high temperature can be executed in short time.</p> |