| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a manufacturing method of a spatial light modulation element crystalloid silicon photoconductor having a wide optical band gap and also having little defects in a film and high phogoconductivity. SOLUTION: At least one kind selected from monosilane and disilane and at least on kinds selected from diborane, phosphine, argon, helium and hydrogen are used as raw gases, and a spatial light modulation element amorphous silicon photoconductor is manufactured on a substrate by a plasma CVD method using high frequency power of 1 to 10 GHz. When the above-mentioned photoconductor is manufactured, an amorphous silicon photoconductor, having photoluminescence spectrum, which is observed in a low temperature region of 50K or lower having high intensity peak at photo energy of 1.7 to 1.8eV, is obtained by periodically repeating a thin film deposition process using the above-mentioned raw gas and a hydrogen gas-using plasma treatment. Besides, the above-mentioned amorphous silicon photoconductor having optical band gap energy of 1.8 to 2.5eV and hydrogen concentration of 4 to 40 atomic % may be used.</p> |
