| 摘要 |
<p>PROBLEM TO BE SOLVED: To minimize an additive capacitance which arises inevitably in the MIM(metal-insulator-metal) formed without using the etching ends of lower electrodes and has a shape allowing easy patterning. SOLUTION: The section or a part branched from a signal wiring 5 is formed as a lower electrode 5a, and a second insulator 24 is disposed only above the part near this etching end. The second insulator 24 forms a contact slit 25. The lower electrode 5a of the position corresponding to the contact slit 2, a first insulator 8 having a nonlinear voltage-current characteristic and an upper electrode 6 function as the MIM element. As a result, the area of the section where the additive capacitor is eventually formed is geometrically minimized.</p> |
