发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF |
摘要 |
A semiconductor device comprises a semiconductor substrate in which a semiconductor element is formed, an interlayer insulating film formed on the semiconductor substrate, an insulating barrier layer, formed on the interlayer insulating film by plasma nitriding, for preventing diffusion of a metal constituting a wiring layer, a conductive barrier layer, formed on the insulating barrier layer, for preventing diffusion of the metal, and a wiring layer formed of the metal on the conductive barrier layer. A bottom portion of the wiring layer is protected by the conductive barrier layer and the insulating barrier layer. Therefore, the diffusion of the metal constituting the wiring layer can be surely prevented. |
申请公布号 |
KR0169283(B1) |
申请公布日期 |
1999.02.01 |
申请号 |
KR19940028068 |
申请日期 |
1994.10.29 |
申请人 |
TOSHIBA KK |
发明人 |
AOYAMA, HISAKO;SUGURO, KYOICHI;NIIYAMA, HIROMI;TAMURA, HITOSHI;HAYASHI, HISATAKA;AOYAMA, TOMONORI;MINAMIHABA, GAKU;IIJIMA, TADASHI |
分类号 |
H01L21/3205;H01L21/60;H01L21/768;H01L23/532 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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