发明名称 PLASMA PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing method and a plasma processing system employing an electrostatic suction unit in which adhesion of particles to a semiconductor substrate is reduced. SOLUTION: In the plasma processing system employing an electrostatic suction unit 1, a semiconductor substrate 4 is charged negatively by applying a minus voltage to a suction electrode 2 which has been applied with a plus voltage before a plasma 5 disappears and then the plasma is extinguished.
申请公布号 JP2001176958(A) 申请公布日期 2001.06.29
申请号 JP19990355494 申请日期 1999.12.15
申请人 HITACHI LTD 发明人 MIYA TAKESHI;HOSHINO MASAKAZU;HACHITANI MASAYUKI;OYAMA KATSUMI
分类号 H01L21/302;C23C16/505;H01L21/3065;H01L21/31;H01L21/68;H01L21/683;H05H1/46 主分类号 H01L21/302
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