| 摘要 |
PURPOSE: A semiconductor laser diode is provided to be manufactured with twice crystal growth and have a current shield layer. CONSTITUTION: A semiconductor laser diode includes an n-type GaAs buffer layer(102), an n-type InGaAIP clad layer(103), an InGaP active layer(104), and a p-type InGaIP clad layer(105), which are sequentially stacked on an n-type GaAs substrate(101). A p-type InGaP electrifying facilitation layer(112) is stacked on the p-type InGaIP clad layer(105) and an n-type GaAs current shield layer(111) is stacked on the flat surfaces having the side index of (100) among the p-type InGaP electrifying facilitation layers(112). A p-type GaAs current path layer(110) is stacked on the slant surface at both sides of the ridge of the n-type GaAs current shield layer(111). A p-type GaAs cap layer(107) is stacked on the surface consisting of the p-type GaAs current path layer(110) and the n-type GaAs current shield layer(111). A p-type metal electrode(108) and an n-type metal electrode(109) are formed on the p-type GaAs cap layer(107) and below the n-type GaAs substrate(101), respectively.
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