PRODUCTION PROCESS OF SINGLE CRYSTAL GaN SUBSTRATE AND SINGLE CRYSTAL GaN SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a production process of a single crystal GaN substrate which has a low through-the-substrate dislocation density and in the surface of which no dislocation line bundle exists and in which no disturbance of the cleavage face is caused, and also to provide the single crystal GaN substrate produced by the process. SOLUTION: This GaN substrate production process involves slicing a GaN single crystal ingot with a plane parallel to the growth direction to produce a substrate, wherein since any dislocation line extends in the parallel direction to the substrate surface, a low dislocation density of the substrate is obtained. Further, a GaN single crystal is grown with the substrate as a seed crystal.