FERROELECTRIC MEMORY DEVICE HAVING MEMORY CELL WHOSE ROWS ARE CONNECTED TO DIFFERENT PLATE LINES

摘要

PROBLEM TO BE SOLVED: To provide a ferroelectric memory device having a memory cell whose rows are connected to different plate lines. SOLUTION: This ferroelectric memory device comprises a plurality of parallel word lines extending in the first direction, a plurality of parallel bit lines extending in the second direction intersecting the first direction and a plurality of parallel plate lines extending in the first direction. A plurality of memory cells are arranged in rows and columns in the first and the second direction. Each memory cell comprises a transistor connected to one line among word lines and one line among bit lines and a ferroelectric capacitor connected to one among transistors and plate lines. Cells arranged in each row are connected to each word line. Ferroelectric capacitors of the first and the second sub-sets are connected respectively to the first and the second plate lines.