发明名称 INNER VOLTAGE LEVEL CONTROL CIRCUIT, SEMICONDUCTOR STORAGE, AND METHOD FOR CONTROLLING THEM
摘要 There are provided a voltage level control circuit with a reduced power comsumption and a method of controlling the same. When a signal "A" is in a "L" level and a signal PL entered from the outside of the voltage level control circuit becomes "H" level, a latch signal La outputted from a latch (11) becomes "H" level, whereby NFETs (14, 17, 24) turn ON. A voltage dividing circuit comprising resistances (12, 13) and current mirror differential amplifiers (20, 27) are placed in active states to output "H" as a signal A which controls a boost voltage Vbt (word line driving voltage).As the boost voltage Vbt is increased and reaches a reference voltage Vref2, a voltage V2 becomes "H", whereby the signal A becomes "L". After the signal A become "L", the latch (11) is made through. At this time, the signal PL is "L", the latch signal La outputted from the latch (11) becomes "L", whereby the NFETs (14, 7, 24) turn OFF. As described here, the NFETs (14, 7, 24) are kept OFF in the other time period than when needed, in order to reduce the power consumption. <IMAGE>
申请公布号 KR20030037266(A) 申请公布日期 2003.05.12
申请号 KR20037001129 申请日期 2003.01.25
申请人 发明人
分类号 G11C11/407;G11C5/14;G11C8/08;G11C11/406;G11C11/4074;G11C11/408 主分类号 G11C11/407
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