| 摘要 |
This provides a semiconductor laser device of a high light output efficiency, which is high in current confinement effect, small in leak current, and favorable in temperature property, and indicates a low threshold current, and can effectively confine laser light to a stripe region, and is favorable in beam profile. <??>This semiconductor laser device (100) includes the laminated structure of an n-AlInP clad layer (103), a superlattice active layer section (104), a p-AlInP first clad layer (105), a GaInP etching stop layer (106) are formed, and on top of that, there are a p-AlInP second clad layer (107), a GaInP protective layer (108) and a p-GaAs contact layer (109), which are processed into a stripe-shaped ridge. A p-side electrode (111) is directly coated and formed on the etching stop layer of ridge top surface, ridge sides and ridge flanks since s the superlattice active layer section is sandwiched between the n-AlInP clad layer and the p-AlInP first clad layer, an energy band gap difference from the active layer section becomes greater. <IMAGE>
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