| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory in which rewriting in units of bytes can be performed. <P>SOLUTION: A memory cell array has a unit formed of one memory cell and one select transistor. One block has one control gate and memory cells connected to one control gate line form one page. A sense amplifier having a latch function is connected to a bit line. In rewriting data, data of the memory cell of one page is read to the sense amplifier. After data are superscribed on data in the sense amplifier and a page erase is performed, data of the sense amplifier is written in the memory cell of one page. Data rewriting in the units of bytes can be performed by superscription of the data in the sense amplifier. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
