| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technology to optimize an exposure condition such as exposure energy and a focus in photolithography in a manufacturing process of a semiconductor device, individually and easily. <P>SOLUTION: An optical system irradiates light on a pattern of a semiconductor wafer and detects information on the shape of the pattern using scattered light generated by the reflection of light irradiated on the pattern. The waveform of an FEM sample wafer having a plurality of shape deformation patterns which have been formed in advance is detected by the optical system and then is stored. One or more characteristic points on a spectrum waveform which are generated accompanied by the change of the pattern are recorded to create a variation model of the characteristic point. Similarly, the spectrum waveform is detected also for the pattern to be measured. From the displacement of the characteristic point on the waveform, the change of the manufacturing condition (deviation in exposure energy, deviation in focus) is estimated using the variation model. By this method, the exposure energy and the focus can be individually fed back and thereby extremely accurate process control can be performed. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
