发明名称 |
FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures |
摘要 |
An NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-oxide layer. As a result of their structure and the method of their fabrication, these elements have higher GMR ratios and lower resistances than elements of the prior art.
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申请公布号 |
US7262941(B2) |
申请公布日期 |
2007.08.28 |
申请号 |
US20040856180 |
申请日期 |
2004.05.28 |
申请人 |
HEADWAY TECHNOLOGIES, INC. |
发明人 |
LI MIN;LIAO SIMON H.;SANO MASASHI;NOGUCHI KIYOSHI;JU KOCHAN;HORNG CHENG T. |
分类号 |
G11B5/39;B32B15/01;C22C38/10;C22C38/12;G01R33/09;G11B5/31;H01F10/16;H01F10/32;H01F41/30;H01L43/08;H01L43/10;H01L43/12 |
主分类号 |
G11B5/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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