HIGH FREQUENCY MOS SWITCH

摘要

PURPOSE: To provide the switch circuit of MOSFET base capable of propagating the signal of a comparatively high frequency with a minimum attenuation. CONSTITUTION: The high frequency switch circuit 10 is provided with a first impedance element connected to the gate of a transfer transistor M1 and a second impedance element coupled to the bulk of the transfer transistor. One of or both the impedance elements practically negate low parasitic shunt capacitance associated with the transfer transistor for controlling the attenuation of the signal when operated with a high frequency. The impedance element is serially coupled with the parasitic capacitance and the impedance of the route is increased so that passable bandwidth can be expanded.