| 摘要 |
A floating gate circuit having a floating gate and a level shift circuit. A first tunneling device formed between a first and second tunnel electrode is included for removing electrons from the floating gate. Electrons are injected onto the floating gate without the use of a tunneling device, e.g., using avalanche injection. A first circuit is coupled to the floating gate for generating an output voltage at an output terminal. The level shift circuit has a second tunnel device coupled between the output terminal and the first tunnel electrode. The second tunnel device is for tracking changes in the characteristics of the first tunneling device connected to the floating gate. The level shift circuit level shifts the output of the floating gate circuit to a voltage that enables the tunnel device coupled to a floating gate to precisely set the floating gate to a desired voltage during a set mode.
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