METHOD FOR PRODUCING SEMICONDUCTOR WAFER DOPED WITH NITROGEN

摘要

PURPOSE: A method for producing a semiconductor wafer doped with nitrogen is provided to uniformly contain NH3 gas contained in a single crystal. CONSTITUTION: The method includes a process of pulling up single crystal from molten liquid of a semiconductor material while supplying a doping material gas to the semiconductor material and a process of separating the semiconductor wafer doped with nitrogen from the pulled-up single crystal. The doping material gas is supplied to the semiconductor material until pulling-up of a part of the single crystal is started, and the semiconductor wafer is separated from the single crystal.