METHODS FOR ETCHING A DIELECTRIC BARRIER LAYER WITH HIGH SELECTIVITY

摘要

Methods for etching a dielectric barrier layer with high selectivity to a dielectric bulk insulating layer are provided. In one embodiment, the method includes providing a substrate having a portion of a dielectric barrier layer exposed through a dielectric bulk insulating layer in a reactor, flowing a gas mixture containing H₂ gas, fluorine containing gas, at least an insert gas into the reactor, and etching the exposed portion of the dielectric barrier layer selectively to the dielectric bulk insulating layer.