| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory capable of reducing a writing current even when an element size is 0.7μm or less. SOLUTION: Each storage region P has a read/write control transistor 34 electrically connected to one of the fixing layer and free layer of each magnetoresistance-effect element 4, a wiring 11 electrically connected to the other of the fixing layer and free layer of each magnetoresistance-effect element 4, and a magnetic yoke 12 surrounding the wiring 11 and imparting a magnetic field to the free layer. There is one transistor 34 in each storage region P (x, y). COPYRIGHT: (C)2008,JPO&INPIT |
