发明名称 Semiconductor device and driving method thereof
摘要 In a light emitting device, a variation in intensity caused by varying a threshold value of a TFT for supplying a current to a light emitting element for each pixel becomes a burden to an improvement of an image quality of the light emitting device. A voltage equal to the threshold value of a TFT ( 106 ) is held in capacitor unit ( 109 ). When a video signal is inputted from a source signal line, the voltage held in the capacitor unit is added thereto and a resultant signal is applied to a gate electrode of the TFT ( 106 ). Even when a threshold value is varied for each pixel, each threshold value is held in the capacitor unit ( 109 ) for each pixel. Thus, the influence of a variation in threshold value can be eliminated. Further, holding of the threshold value is conducted by only the capacitor unit ( 109 ) and a charge does not move at writing of a video signal so that a voltage between both electrodes is not changed. Thus, it is not influenced by a variation in capacitance value.
申请公布号 US7365713(B2) 申请公布日期 2008.04.29
申请号 US20020279000 申请日期 2002.10.24
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KIMURA HAJIME
分类号 G09G3/30;G09G3/32;H01L27/32;H01L51/52 主分类号 G09G3/30
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