PLANE EMISSION-TYPE SEMICONDUCTOR LASER

摘要

A plane emission-type semiconductor laser is provided wherein effective resonator length is reduced and higher-speed direct modulation is materialized. When optical path length (L) of a resonance part with respect to oscillation wavelength ?<SUB>0</SUB>is set to be 0.9OE<SUB>0 </SUB>= L = 1.1OE<SUB>0</SUB>, refractive indexes of a high refractive index layer and a low refractive index layer of a dielectric DBR to be n<SUB>H1</SUB> and n<SUB>L1</SUB>, an average refractive index in optical path length ?<SUB>0</SUB>/4 in a semiconductor which is brought into contact with the dielectric (DBR) to be n<SUB>S1</SUB> and the refractive indexes of the high refractive index layer and the low refractive index layer of the semiconductor (DBR) to be n<SUB>H2</SUB> and n<SUB>L2</SUB>, respective materials to be used are selected to satisfy following conditions (1) and (2). (1):n<SUB>H1</SUB>>f(n<SUB>S1</SUB>)n<SUB>L1</SUB>