MANUFACTURING PROCESS OF GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SUBSTRATE AND GROUP III NITRIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing process of a large-sized Group III nitride crystal which has a low dislocation density at least in the surface.

SOLUTION: The manufacturing process of a Group III nitride crystal comprises a step of providing a base substrate (1) comprising a Group III nitride seed crystal having a main area (1s) and a polarity reversed area (1t) having polarity reversed in <0001> direction to the main area (1s), and a step of growing a Group III nitride crystal (10) from a raw material solution 5 containing at least a Group III element, nitrogen and an alkali metal element on the main area 1s and the polarity reversed area (1t) on the base substrate. A first area (10s) having a higher growth rate of the Group III nitride crystal (10) grown on the main area (1s) covers a second area (10t) having a lower growth rate of the Group III nitride crystal (10) grown on the polarity reversed area (1t).

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