发明名称 |
Measurement of properties of thin films on sidewalls |
摘要 |
A method for X-ray analysis of a sample includes directing a beam of X-rays to impinge on an area of a periodic feature on a surface of the sample and receiving the X-rays scattered from the surface in a reflection mode so as to detect a spectrum of diffraction in the scattered X-rays as a function of azimuth. The spectrum of diffraction is analyzed in order to determine a dimension of the feature.
|
申请公布号 |
US7483513(B2) |
申请公布日期 |
2009.01.27 |
申请号 |
US20060487433 |
申请日期 |
2006.07.17 |
申请人 |
JORDAN VALLEY SEMICONDUCTORS, LTD. |
发明人 |
MAZOR ISAAC;YOKHIN BORIS |
分类号 |
G01N23/20 |
主分类号 |
G01N23/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|