发明名称 Measurement of properties of thin films on sidewalls
摘要 A method for X-ray analysis of a sample includes directing a beam of X-rays to impinge on an area of a periodic feature on a surface of the sample and receiving the X-rays scattered from the surface in a reflection mode so as to detect a spectrum of diffraction in the scattered X-rays as a function of azimuth. The spectrum of diffraction is analyzed in order to determine a dimension of the feature.
申请公布号 US7483513(B2) 申请公布日期 2009.01.27
申请号 US20060487433 申请日期 2006.07.17
申请人 JORDAN VALLEY SEMICONDUCTORS, LTD. 发明人 MAZOR ISAAC;YOKHIN BORIS
分类号 G01N23/20 主分类号 G01N23/20
代理机构 代理人
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