发明名称 |
Ultra-thin Si channel MOSFET using a self-aligned oxygen implant and damascene technique |
摘要 |
The present invention provides a method of forming a thin channel MOSFET having low external resistance. The method comprises forming a dummy gate region atop a substrate; implanting oxide forming dopant through said dummy gate to create a localized oxide region in a portion of the substrate aligned to the dummy gate region that thins a channel region; forming source/drain extension regions abutting said channel region; and replacing the dummy gate with a gate conductor.
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申请公布号 |
US7482243(B2) |
申请公布日期 |
2009.01.27 |
申请号 |
US20060436756 |
申请日期 |
2006.05.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BOYD DIANE C.;DORIS BRUCE B.;IEONG MEIKEI;SADANA DEVENDRA K. |
分类号 |
H01L21/76;H01L21/336;H01L21/338;H01L21/8238;H01L21/84;H01L29/786 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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