| 摘要 |
PURPOSE:To heighten the current amplification factors of both a Tt R in the lateral direction and a TR in the longitudinal direction, by simultaneously raising the emitter injection efficienty and base transportation efficiency of the TR in the lateral direction and the emitter injection efficiency and base transportation efficiency of the TR in the longitudinal direction. CONSTITUTION:The first and second P<+> conductive type ranges 13, 14 are formed into a N<-> conductive type epitaxial range 12 made up on a semiconductor substrate 11, and N<+> conductive type ramges 151, 152, the second P conductive type ranges 161, 162 and N<+> conductive type additional ranges 171, 172 are successively built up to the N<-> conductive type range 12 surrounded by the second P<+> conductive type range range 14 toward the inside from the surface. A transistor Q1 in the lateral direction is constituted using the range 13 as an emitter, the range 12 as a base and the range 14 and the ranges 161, 162 as collectors while a transistor Q2 in the longitudinal direction is formed empolying the ranges 171, 172 as emitters, the range 14 and the ranges 161, 162 as bases and the ranges 171, 172 as collectors. |
