发明名称 METHOD OF PRODUCING POLYCRYSTALLINE SILICON INGOT
摘要 PROBLEM TO BE SOLVED: To easily obtain a polycrystalline silicon ingot excellent in quality.SOLUTION: A method of producing a polycrystalline silicon ingot according to the present invention, includes: a mold preparation step of preparing a mold having a bottom part and side parts; a molten liquid preparation step of installing a silicon molten liquid in the mold, obtained by heating and melting a solid raw material comprising silicon; a solidified layer forming step of controlling temperatures of the silicon molten liquid and the mold to form a first solidified layer between the silicon molten liquid and the side parts of the mold and a second solidified layer in a liquid surface part of the silicon molten liquid, respectively; a remelting step of heating and melting the second solidified layer while maintaining a solidified state of the first solidified layer in a range from the bottom part of the mold to a height not less than a half of the silicon molten liquid; and a solidifying step of cooling the silicon molten liquid from a lower part to an upper part thereof to solidify the silicon molten liquid.SELECTED DRAWING: Figure 2
申请公布号 JP2016124713(A) 申请公布日期 2016.07.11
申请号 JP20140264144 申请日期 2014.12.26
申请人 KYOCERA CORP 发明人 SAKAI YOHEI;HASEGAWA SHOJI;MATSUO TADASHI
分类号 C01B33/037 主分类号 C01B33/037
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