Ternary content addressable memory (TCAM) with magnetic tunnel junction (MTJ) devices

摘要

A ternary content addressable memory (TCAM) cell is coupled to a first word line and a first match line and includes a first data storage portion coupled to a first search line, a second data storage portion coupled to a complement of the first search line, and a resistor divider portion including two resistive elements coupled in series with the first and second data storage portions of the first TCAM cell. The first and second data storage portions of the first TCAM cell are coupled to a first supply voltage and include two resistive elements coupled in parallel.

主权项

1. A memory device comprising:
an array of ternary content addressable memory (TCAM) cells, each of the TCAM cells including:
a first cell portion including a first programmable resistive element coupled in parallel with a second resistive element;a second cell portion coupled in parallel with the first cell portion, the second cell portion including a third programmable resistive element coupled in parallel with a fourth resistive element; a plurality of match lines, each of the plurality of match lines is coupled to a respective row of the TCAM cells at an output of each of the first and second cell portions in the respective row; a plurality of true search lines, each of the plurality of true search lines is coupled to control input to the first cell portion of a respective column of the TCAM cells; and a plurality of complementary search lines, each of the plurality of complementary search lines is coupled to control input to the second cell portion of the respective column of the TCAM cells, wherein each of the TCAM cells further comprises at least two programmable resistors coupled in series, a first one of the at least two programmable resistors has a first terminal coupled at the output of the first and second cell portions, and a second one of the at least two programmable resistors has a first terminal coupled to a first supply voltage.