发明名称 |
Soldering method and method of manufacturing semiconductor device |
摘要 |
Provided is a soldering method through nickel plating layer to reduce void occurrence rate and a method of manufacturing semiconductor device by using the soldering method. By heating a copper base plate having a nickel plating layer at a temperature range of 300° C. to 400° C. in an inert gas atmosphere beforehand, void occurrence rate can be reduced in soldering the copper base plate to an insulating circuit board. |
申请公布号 |
US9434028(B2) |
申请公布日期 |
2016.09.06 |
申请号 |
US201414301425 |
申请日期 |
2014.06.11 |
申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
Iso Akira |
分类号 |
B23K1/20;B23K35/12;B23K35/38;C04B37/00;C04B37/02;H01L23/373;H01L21/48;H01L23/057;H01L23/00;H01L25/07 |
主分类号 |
B23K1/20 |
代理机构 |
Rossi, Kimms & McDowell LLP |
代理人 |
Rossi, Kimms & McDowell LLP |
主权项 |
1. A soldering method comprising:
heat treating a member having a nickel plating layer including hydrogen in a heat treating temperature range of 300° C. to 400° C. in an inert gas atmosphere, thereby reducing a nickel oxide film on a surface of the nickel plating layer; disposing a solder between the heat-treated member and a joined member; and joining the heat-treated member to the joined member with the solder in a reducing gas atmosphere at a second temperature lower than the heat treating temperature. |
地址 |
Kawasaki-shi JP |