发明名称 Soldering method and method of manufacturing semiconductor device
摘要 Provided is a soldering method through nickel plating layer to reduce void occurrence rate and a method of manufacturing semiconductor device by using the soldering method. By heating a copper base plate having a nickel plating layer at a temperature range of 300° C. to 400° C. in an inert gas atmosphere beforehand, void occurrence rate can be reduced in soldering the copper base plate to an insulating circuit board.
申请公布号 US9434028(B2) 申请公布日期 2016.09.06
申请号 US201414301425 申请日期 2014.06.11
申请人 FUJI ELECTRIC CO., LTD. 发明人 Iso Akira
分类号 B23K1/20;B23K35/12;B23K35/38;C04B37/00;C04B37/02;H01L23/373;H01L21/48;H01L23/057;H01L23/00;H01L25/07 主分类号 B23K1/20
代理机构 Rossi, Kimms & McDowell LLP 代理人 Rossi, Kimms & McDowell LLP
主权项 1. A soldering method comprising: heat treating a member having a nickel plating layer including hydrogen in a heat treating temperature range of 300° C. to 400° C. in an inert gas atmosphere, thereby reducing a nickel oxide film on a surface of the nickel plating layer; disposing a solder between the heat-treated member and a joined member; and joining the heat-treated member to the joined member with the solder in a reducing gas atmosphere at a second temperature lower than the heat treating temperature.
地址 Kawasaki-shi JP