| 摘要 |
PROBLEM TO BE SOLVED: To provide a low-pressure/high-density plasma processing device wherein, related to dry cleaning of a position film, the local deviation in the thickness of a derivative plate is prevented for stable production processes. SOLUTION: A vacuum plane between a vacuum reactive vessel 1 and a coil 5 is provided with a silicon plate 7. At normal etching, the silicon plate 7 and the vacuum reactive vessel 1 are controlled for temperature, with the silicon plate 7 acting as an insulator while controlled to the temperature of vacuum reactive vessel 1 or above, for preventing formation of a deposition film on the vacuum plane of the silicon plate 7. At dry cleaning, the silicon plate 7 acts as a conductor while a high-frequency wave electric power is applied so that the gas reactive with the deposition film is made incident on the deposition film. |
