| 摘要 |
PURPOSE:To obtain an image high in resolution and quality by changing the concentration distributions of constituent elements in the layer thickness direction so as to obtain optical band gap matching in the interface between a photoconductive layer and a surface layer, and controlling the maximum concentration of H in the surface layer to 41-70atom%. CONSTITUTION:The light receiving member is composed of a substrate 101, a light receiving layer 100 formed on the substrate 101 comprising an electrostatic charge blocking layer 102, the photoconductive layer 103 made of a-Si(H,X), and the surface layer 104 of an amorphous material containing Si, C, and H as constituent elements. The concentration distributions of the constituent elements in the layer thickness direction are changed so as to obtain optical band gap matching in the interface between the surface layer 104 and the photoconductive layer 103, and the maximum concentration of H in the surface layer 105 is controlled to 41-70atom%, thus permitting images high in resolution and quality to be repeatedly obtained. |
