| 摘要 |
PURPOSE:To improve a dry etching characteristic in fine working of a wafer, etc. and to increase throughput by using Si-LMR as an upper layer resist and a resist which has low sensitivity to light of (g) rays or is not sensitive thereto. CONSTITUTION:The positive type photoresist layer which has the low sensitivity to (g) rays or has preferably no sensitivity thereto is coated as the lower layer resist on a member to be formed with a pattern. A resist film of a negative resist material consisting of a silyl ether of a naphthoquinonediadize sulfonate of a novolak resin is formed as the upper layer resist on the lower layer resist. The (g) rays are irradiated to such upper layer resist and the resist is developed to form the pattern of the upper layer resist. Light of about 200-410nm wavelength shorter than the wavelength of the (g) rays is collectively irradiated on at least the upper layer resist and the irradiated part of the lower layer resist pattern is developed by an alkaline developing soln. to form the lower layer resist pattern. The pattern is formed by etching with such resist patterns as a mask. |
